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- W2045754987 abstract "A novel 0.6 μm, single polysilicon emitter bipolar technology has been optimized in order to reduce the consequences of narrow emitter effects (NEE) appearing at the laterals of the emitter area. The primary technological mechanisms of these effects have been studied and differentiated for this technology. They have been found to be the polysilicon over-etch into the underlying silicon, the pedestal oxidation, both of them in the area of the extrinsic base implantation, and the extrinsic base lateral diffusion. Designs of experiments techniques have been used in order to study all these technological elements and their effect on the final performance of the transistors. Common emitter current gain variation versus emitter width has been studied by means of test structures and an optimization method is proposed. Lateral diffusion of extrinsic base has been identified as main source of NEE in this technology, which reduces the transistors current gain. Pedestal oxidation has been identified as secondary source of these effects, acting in an opposite way of lateral diffusion increasing the transistors current gain. This opposed effects have been tuned in the technological optimization to minimize the NEE by means of a mutual compensation." @default.
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- W2045754987 date "2002-08-01" @default.
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- W2045754987 title "Optimization of a 0.6μm, single polysilicon emitter bipolar technology versus narrow emitter effects" @default.
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- W2045754987 doi "https://doi.org/10.1016/s0026-2692(02)00031-9" @default.
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