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- W2045759105 abstract "We investigated the transport properties of [112¯0]-gallium nitride (GaN)/gallium oxide (Ga2O3) single nanowire metal-oxide-semiconductor field-effect-transistor grown on (0001) sapphire substrates. With 0.1 μm gate-length and 60 nm wire-size, the device exhibits maximum transconductance of 85 μS, saturation current of 105 μA, and unity current gain bandwidth ft at 95 GHz. From a three-dimensional (3D) diffusion-and-drift model analysis, polarization-induced negative space charge of −3 × 1012 cm−2 at the back interface of GaN/sapphire, positive space charge of 7 × 1012 cm−2 at the inclined semi-polar {11¯01¯} GaN/Ga2O3 interfaces with screening by two-dimensional electron gas to keep charge neutrality were found responsible for the high-speed transport characteristics." @default.
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- W2045759105 date "2011-10-10" @default.
- W2045759105 modified "2023-10-12" @default.
- W2045759105 title "Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor" @default.
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- W2045759105 doi "https://doi.org/10.1063/1.3651332" @default.
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