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• W2045765279 abstract "Abstract 190 keV H ions are implanted with doses ranging from 1 × 1015 to 1.4 × 1018 cm−2 into pure amorphous silicon layers prepared by 2 MeV Silicon irradiation of crystalline silicon. Depth profiles of the changed complex refractive index (n + ik) are determined from high-resolution reflection and transmission measurements across bevelled surfaces. The increase of the reflectivity of annealed amorphous silicon (a-Si) resulting from collision induced Si bonding defects is used to determine the nuclear stopping power depth profile. A nuclear energy density of 3.1 eV per Si atom has to be deposited by the H projectiles in order to transform the relaxed structure of a-Si into the state of saturated disorder which is characteristic for irradiation amorphized silicon (ia-Si). On account of the saturated damage in pre-amorphized ia-Si targets the observed reduction of n and k is associated with the implanted H concentration c H. Projected range, range straggling, and skewness are evaluated from the optically ..." @default.
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• W2045765279 date "1984-01-01" @default.
• W2045765279 modified "2023-09-26" @default.
• W2045765279 title "Optical characterization of damage and concentration profiles in H ion implanted amorphous silicon" @default.
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• W2045765279 doi "https://doi.org/10.1080/00337578408206088" @default.
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