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- W2045771869 abstract "The authors have investigated for the first time the use of a novel Ga source, tri-isobutylgallium (TIBG), as a replacement for triethylgallium (TEG) for growth of InxGa1-xAsyP1-y by metal organic molecular beam epitaxy (MOMBE). In spite of the low vapour pressure of TIBG, growth rates up to 225 AA min-1 were obtained. The growth rate increased slightly ( approximately 10%) with growth temperature over the range 475-525 degrees C. Carbon backgrounds in InGaAsP ( lambda =1.3 mu m) layers were found to vary with growth temperature in a manner similar to that of In0.5Ga0.5P grown using the same precursors, yielding the lowest carbon level, approximately 3*1016 cm-3, at the highest growth temperature, 525 degrees C. By contrast, In0.53Ga0.47As grown from TIBG yields consistently lower carbon levels than InGaAsP and shows a much weaker dependence of carbon on temperature. The InGaAsP ( lambda =1.3 mu m) lattice mismatch ( Delta a/a) was found to vary with growth temperature by approximately 7.5*10-5 degrees C-1, which represents significant improvement over values reported for similar layers grown from TEG. InGaAsP composition was also found to depend upon V/III ratio, with lower hydride flows leading to enhanced incorporation of Ga. Because of the reduced sensitivity of composition to temperature, excellent uniformity, with a standard deviation of 1.6 nm, in the room temperature luminescence peak wavelength was obtained across a 2 inch wafer." @default.
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- W2045771869 date "1993-03-01" @default.
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- W2045771869 title "Growth of InxGa1-xAsyP1-yby metal organic molecular beam epitaxy using tri-isobutylgallium" @default.
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- W2045771869 doi "https://doi.org/10.1088/0268-1242/8/3/028" @default.
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