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- W2045790777 abstract "Chemistry associated with the selective oxidation of silicon (Si) vs. tungsten (W) by water (H 2 O) steam in hydrogen (H 2 ) has been studied. New kinetics data and equations are obtained for SiO 2 growth on Si(100) at the atmospheric pressure and 950-1100°C, with the H 2 O fractional pressure between 0 to 0.8 atmospheres. The selectivity window for oxidizing Si but not W is determined to be pH 2 :pH 2 O > 3:1. Oxygen content in W films slightly increased after being processed within the selectivity window. When W films were processed out of the selectivity window, both W oxidation and Si migration from the underlying SiO 2 layers into the W layers were observed." @default.
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- W2045790777 date "2003-01-01" @default.
- W2045790777 modified "2023-10-18" @default.
- W2045790777 title "Selective Oxidation of Silicon (100) vs. Tungsten Surfaces by Steam in Hydrogen" @default.
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- W2045790777 doi "https://doi.org/10.1149/1.1603250" @default.
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