Matches in SemOpenAlex for { <https://semopenalex.org/work/W2045807741> ?p ?o ?g. }
- W2045807741 endingPage "1904" @default.
- W2045807741 startingPage "1867" @default.
- W2045807741 abstract "According to the recent prediction made by the Semiconductor Industry Association (SIA) in International Technology Roadmap for Semiconductors (ITRS), the silicon technology will continue its historical rate of advancement with the Moore’s law for at least a couple of decades. With this trend, the silicon gate oxide will be scaled down to its physical limit in order to maintain proper control of the nanosize MOS transistors. This work reviews several critical issues of MOS gate dielectrics in the nanometer range. Although it was suggested that the conventional oxide can be scaled down, in principle, to two atomic layers of about 7 Å, this is not practically feasible because of the non-scalabilities of interface, trap capture cross-section, leakage current, and the statistical parameters of fabrication processes. Introducing a high-κ material can help solving most of the problems by using physically thicker high-κ gate dielectric films but several other reliability problems of the MOS devices rises. Being used in the extreme fine structure, the requirements for the material properties of the new high-κ are very stringent. Unfortunately, most of the high-κ materials are ionic metal oxides. This fundamental physics results in several undesirable instability issues when interfacing with silicon and with the CMOS processes. Bulk type thin oxynitride/high-κ stack could be a good solution for the coming technology nodes." @default.
- W2045807741 created "2016-06-24" @default.
- W2045807741 creator A5007779112 @default.
- W2045807741 creator A5065265137 @default.
- W2045807741 date "2006-10-01" @default.
- W2045807741 modified "2023-10-14" @default.
- W2045807741 title "On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors" @default.
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