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- W2045811312 abstract "Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys ${text{Ga}}_{0.50}{text{In}}_{0.50}text{P}$ and ${text{Ga}}_{0.47}{text{In}}_{0.53}text{As}$ irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and ${text{Ga}}_{0.50}{text{In}}_{0.50}text{P}$ are readily amorphized, GaP and GaAs remain almost undamaged and InAs and ${text{Ga}}_{0.47}{text{In}}_{0.53}text{As}$ exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss." @default.
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- W2045811312 date "2010-02-01" @default.
- W2045811312 modified "2023-10-11" @default.
- W2045811312 title "Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors" @default.
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- W2045811312 doi "https://doi.org/10.1103/physrevb.81.075201" @default.
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