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• W2045901480 abstract "In this paper, Te-free Ga-Sb-Se material is considered to be a storage medium for phase change memory. Compared with Ge2Sb2Te5, Ga1Sb6Se3 exhibits a better thermal stability, which leads to a brilliant performance for data retention. Ga1Sb6Se3-based phase change memory cell shows reversible switching between reset and set states with a resistance ratio of two orders of magnitude. The minimum reset/set voltages are significantly lower than those of Ge2Sb2Te5-based one. Meanwhile, Ga1Sb6Se3 film possesses a faster switching speed than Ge2Sb2Te5. Thermal simulation confirms the improvement of cell performance originating from the low thermal conductivity and low melting point of Ga1Sb6Se3." @default.
• W2045901480 created "2016-06-24" @default.
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• W2045901480 date "2011-12-12" @default.
• W2045901480 modified "2023-09-25" @default.
• W2045901480 title "Ga-Sb-Se material for low-power phase change memory" @default.
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• W2045901480 doi "https://doi.org/10.1063/1.3669699" @default.
• W2045901480 hasPublicationYear "2011" @default.
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