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- W2045902550 abstract "CeO 2 films were epitaxially grown on Si(111) substrates by reactive sputtering following the single-crystal CeO 2 seed layer formation by oxygen-reactive solid-phase epitaxy. Formation of metallic Ce layers and oxidation of the layers prior to reactive sputtering was found to be the key process for epitaxial growth of CeO 2 on Si substrates. An Auger electron spectroscopy depth profiling analysis showed that the Ce–Si interlayer was formed after the Ce metal deposition. Reflection high-energy electron diffraction and transmission electron microscopy proved that epitaxial CeO 2 films were grown by reactive sputtering on the seed layers formed by oxidation of Ce metal layers with thickness of 5 to 10 nm. Crystalline quality of the films depended on the sputtering conditions, especially on total sputtering pressure and oxygen concentration. The optimization of the conditions for seed layer formation by oxygen-reactive solid-phase epitaxy and reactive sputtering was an important factor for improving the crystalline quality of epitaxially grown CeO 2 film." @default.
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- W2045902550 date "1994-01-01" @default.
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- W2045902550 title "Epitaxial Growth of CeO<sub>2</sub> Films on Si(111) by Sputtering" @default.
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- W2045902550 doi "https://doi.org/10.1143/jjap.33.270" @default.
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