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- W2045908096 abstract "The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6×10−6 Ω cm2 without any annealing are obtained. The resistivity decreases to 3.7×10−6 Ω cm2 after annealing at 350°C for 90 s." @default.
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- W2045908096 date "2009-12-01" @default.
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- W2045908096 title "Low-resistive sulphur-treated ohmic contacts to n-type InAsSb" @default.
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- W2045908096 doi "https://doi.org/10.1049/iet-opt.2009.0038" @default.
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