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• W2045951222 abstract "Electronic potential measurements performed by low-temperature Kelvin probe force microscopy on silicon-on-insulator lateral nanoscale pn junctions are presented. The electronic potential landscape contains a region of enhanced potential induced by interdiffused dopants with deeper ground-state levels compared to bulk. The discrete dopant distribution can be observed in specific line profiles. In most line profiles, time-dependent potential fluctuations due to charging and discharging of dopants give rise to a localized-noise area corresponding to the depletion region." @default.
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• W2045951222 date "2013-02-25" @default.
• W2045951222 modified "2023-09-27" @default.
• W2045951222 title "Effects of deep-level dopants on the electronic potential of thin Si <i>pn</i> junctions observed by Kelvin probe force microscope" @default.
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• W2045951222 doi "https://doi.org/10.1063/1.4794406" @default.
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