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- W2045952765 abstract "Fluorine doped silicon dioxide (SiOF) is recognized as a potential intermetal dielectric (IMD) film for sub-half micron devices, due to its low dielectric constant (κ) and good gap-fill capabilities. For the first time, physically stable and high deposition rate (1550 nm/min) SiOF films were deposited using a parallel-plate plasma CVD–single wafer DxZ reactor, involving SiF4/TEOS/O2 chemistry. The analytical results indicate that these SiOF films, having a F concentration up to 3.0%, contain only Si–F bonding, do not absorb moisture and show stable dielectric constants. A typical highly stable SiOF film has F concentration and dielectric constant values of 2.4% and 3.5, respectively. This film is thermally stable up to 600°C and can be used as a low cost cap layer for HDP–CVD oxides and other low κ spin-on-glass materials, as well as an IMD layer for damascene applications." @default.
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- W2045952765 date "1997-10-01" @default.
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- W2045952765 title "Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films" @default.
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- W2045952765 doi "https://doi.org/10.1016/s0040-6090(97)00478-1" @default.
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