Matches in SemOpenAlex for { <https://semopenalex.org/work/W2045975052> ?p ?o ?g. }
- W2045975052 abstract "Thermal oxidation is an effective method to reduce deep levels, especially the Z1∕2-center (EC−0.67 eV), which strongly suppresses carrier lifetimes in n-type 4H-SiC epilayers. The oxidation, however, simultaneously generates other deep levels, HK0 (EV+0.79 eV) and HK2 (EV+0.98 eV) centers, within the lower half of the bandgap of SiC, where the HK0 center is a dominant deep level with a concentration of about 1×1013 cm−3 after oxidation. By comparing deep levels observed in three sets of p-type 4H-SiC: oxidized, electron-irradiated, and C+- or Si+-implanted samples, we find that the HK0 and HK2 centers are complexes including carbon interstitials such as the di-carbon interstitial or di-carbon antisite. Other defects observed in p-type 4H-SiC after electron irradiation or after C+/Si+ implantation are also studied." @default.
- W2045975052 created "2016-06-24" @default.
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- W2045975052 date "2013-01-17" @default.
- W2045975052 modified "2023-10-14" @default.
- W2045975052 title "Deep levels generated by thermal oxidation in p-type 4H-SiC" @default.
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- W2045975052 doi "https://doi.org/10.1063/1.4776240" @default.
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