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- W2046016688 abstract "In 0.2 Ga 0.8 N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In 0.2 Ga 0.8 N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08±0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found ∼0.74 eV and a type-II heterojunction." @default.
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- W2046016688 date "2012-01-26" @default.
- W2046016688 modified "2023-09-26" @default.
- W2046016688 title "Band-Structure Lineup at In<sub>0.2</sub>Ga<sub>0.8</sub>N/Si Heterostructures by X-ray Photoelectron Spectroscopy" @default.
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- W2046016688 doi "https://doi.org/10.1143/jjap.51.020203" @default.
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