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- W2046145666 abstract "In this letter, the use of an ordered ultrathin ZnSe dipole layer to significantly modify the band discontinuity at the Si/Ge(111)-c(2×8) heterojunction is reported. Soft x-ray photoemission spectroscopy (SXPS) was utilized to monitor the evolution of the interface. The ZnSe intralayer increased the valence band offset by ∼0.57 eV, as compared to a negligible valence band offset for the Si/Ge(111) junction. This dramatic modification is interpreted in terms of the charge transfer at the interface." @default.
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- W2046145666 date "1998-05-25" @default.
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- W2046145666 title "Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface" @default.
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- W2046145666 doi "https://doi.org/10.1063/1.121106" @default.
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