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- W2046175539 abstract "Pulsed supersonic molecular beam scattering has been used to study of the inelastic scattering, trapping desorption and reactive channels for the Cl2+GaAs(100) thermal etching reactions. Temperature profiles of the reactive products GaCl, GaCl3, AsCl3, As4 and As2 are reported in the range 340 to 825 K. Angular and time-of-flight (TOF) distributions of inelastically scattered and trapped+desorbed Cl2 are also reported. The translational inelasticity has been measured as a function of final scattering angle at two initial translational energies, 18 and 53.4 kJ mol−1. Angular distribution of all reaction products are described by a cosn(θ) form with 1.1≤n≤1.3. The TOF distributions of GaCl, GaCl3 and AsCl3 reveal prompt production but with measurable time delays (50 μs–5 ms). The As4 and As2 signals are effectively demodulated and correspond to delayed production on the surface with a time constant >1 s. The surface time profiles for GaCl and GaCl3 are each well described by double-exponential decays for production desorption from the surface. The temperature dependence of the time constants for each product yield pairs of Arrhenius plots with common activation energies but different pre-exponential factors. It is argued that these do not correspond to two separate processes but reflect single product desorption with a coverage-dependent activation energy." @default.
- W2046175539 created "2016-06-24" @default.
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- W2046175539 date "1998-11-01" @default.
- W2046175539 modified "2023-10-14" @default.
- W2046175539 title "Reactive scattering study of etching dynamics: Cl2 on GaAs(100)" @default.
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- W2046175539 doi "https://doi.org/10.1016/s0039-6028(98)00715-8" @default.
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