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- W2046244387 abstract "Abstract The active regions of conventional c ‐plane (Al,In,Ga)N optoelectronic devices suffer from deleterious polarization effects. These polarization effects can be eliminated by growing devices on alternative GaN planes, such as {1 $ bar 1 $ 00} m ‐plane or {11 $ bar 2 $ 0} a ‐plane films. Previous attempts to grow nonpolar GaN by vapor phase and molecular beam epitaxy methods yielded rough and faceted surfaces that were unsuitable for device use. Beginning with Waltereit et al.'s work [Nature 406 , 865 (2000)], significant progress has been made in improving nonpolar GaN structural quality and morphology. This paper reviews the structural and morphological characteristics of planar, nonpolar a ‐plane and m ‐plane GaN films grown by vapor phase and molecular beam epitaxy techniques. Defect reduction via lateral epitaxial overgrowth, and the influence of extended defects on surface morphology will be further discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2046244387 date "2007-07-19" @default.
- W2046244387 modified "2023-10-09" @default.
- W2046244387 title "Progress in the growth of nonpolar gallium nitride" @default.
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- W2046244387 doi "https://doi.org/10.1002/pssb.200675625" @default.
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