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- W2046256341 abstract "Alternating phase shift mask in association with the I-line resist process is applied to the gate level of 0.25micrometers and below design rules. An exposure latitude of 30 percent on 0.25micrometers isolated lines is deduced from electrical and atomic force microscope measurements of test wafers. Results on batch wafers confirm the ability of this standard process to print 0.25micrometers design rule circuits. It is possible, with minor process modifications, to print 0.18micrometers transistors with good dimension control for architecture studies." @default.
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- W2046256341 date "1996-06-07" @default.
- W2046256341 modified "2023-09-23" @default.
- W2046256341 title "<title>0.2-um lithography using i-line and alternating phase-shift mask</title>" @default.
- W2046256341 doi "https://doi.org/10.1117/12.240917" @default.
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