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• W2046282605 endingPage "44" @default.
• W2046282605 startingPage "35" @default.
• W2046282605 abstract "The growing importance of ultra-low energy implantation in Si processing imposes extensive characterization and understanding of such a novel energy regime. In this paper we investigate the evolution of ultra-low energy B implants (0.25–1 keV) after post-implantation annealing, both in terms of atomic diffusion and electrical activation of the doping atoms. Transient enhanced diffusion (TED) of boron after annealing at 900°C is observed even for boron implanted at 250 eV, and also when the implant dose is below the amorphization threshold. At higher temperatures for long anneal times, the TED is overwhelmed by the equilibrium diffusion and it is not visible. However, provided the correct combination of temperatures and times is chosen, the TED can always be observed in samples implanted with a dose at least of 1×1014 cm2. We suggest a possible microscopic mechanism to justify the dependence of the enhanced diffusion of ultra-low energy implanted boron on the implant dose, energy and annealing temperature. An excess of interstitials occurs giving rise to the formation of interstitials-like complexes containing B, probably due to enhanced annihilation of vacancies at the surface. Such an excess of interstitials is able to promote enhanced diffusion of implanted boron, provided the implant dose is high enough to generate a significant total number of point defects. The electrical activation of the ultra-low energy implanted B is shown to be strictly connected to its diffusion. With increasing the dose, the motion of B is supported by the increased amount of ion beam generated interstitials. We have also observed, at the same time, that the electrical activation is favored. The electrical activation, which can be achieved by the ultra-low energy implants we have investigated, is between 10 and 40% after annealing at 1100°C, depending on the implanted dose. For the highest dose we have studied, i.e. 1×1015 cm2, the sheet resistance measured after annealing at 1100°C in a range between 250 eV and 1 keV, is below 1000 Ω. Ultra-low energy implantation is therefore extremely appealing for the future generations of semiconductor devices." @default.
• W2046282605 created "2016-06-24" @default.
• W2046282605 creator A5003019769 @default.
• W2046282605 creator A5005601798 @default.
• W2046282605 creator A5009799042 @default.
• W2046282605 creator A5037010980 @default.
• W2046282605 creator A5041246288 @default.
• W2046282605 creator A5067863367 @default.
• W2046282605 creator A5079752209 @default.
• W2046282605 creator A5085500043 @default.
• W2046282605 date "1999-04-01" @default.
• W2046282605 modified "2023-10-03" @default.
• W2046282605 title "Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon" @default.
• W2046282605 cites W1965058579 @default.
• W2046282605 cites W1965464118 @default.
• W2046282605 cites W1981545888 @default.
• W2046282605 cites W1997428111 @default.
• W2046282605 cites W2002627823 @default.
• W2046282605 cites W2002746004 @default.
• W2046282605 cites W2015144097 @default.
• W2046282605 cites W2026222030 @default.
• W2046282605 cites W2040950201 @default.
• W2046282605 cites W2060879230 @default.
• W2046282605 cites W2069144385 @default.
• W2046282605 cites W2077994487 @default.
• W2046282605 cites W2087618248 @default.
• W2046282605 cites W2090914248 @default.
• W2046282605 doi "https://doi.org/10.1016/s1369-8001(99)00004-9" @default.
• W2046282605 hasPublicationYear "1999" @default.
• W2046282605 type Work @default.
• W2046282605 sameAs 2046282605 @default.
• W2046282605 citedByCount "27" @default.
• W2046282605 countsByYear W20462826052015 @default.
• W2046282605 crossrefType "journal-article" @default.
• W2046282605 hasAuthorship W2046282605A5003019769 @default.
• W2046282605 hasAuthorship W2046282605A5005601798 @default.
• W2046282605 hasAuthorship W2046282605A5009799042 @default.
• W2046282605 hasAuthorship W2046282605A5037010980 @default.
• W2046282605 hasAuthorship W2046282605A5041246288 @default.
• W2046282605 hasAuthorship W2046282605A5067863367 @default.
• W2046282605 hasAuthorship W2046282605A5079752209 @default.
• W2046282605 hasAuthorship W2046282605A5085500043 @default.
• W2046282605 hasConcept C113196181 @default.
• W2046282605 hasConcept C121332964 @default.
• W2046282605 hasConcept C145148216 @default.
• W2046282605 hasConcept C147789679 @default.
• W2046282605 hasConcept C159467904 @default.
• W2046282605 hasConcept C164675345 @default.
• W2046282605 hasConcept C178790620 @default.
• W2046282605 hasConcept C184779094 @default.
• W2046282605 hasConcept C185592680 @default.
• W2046282605 hasConcept C191897082 @default.
• W2046282605 hasConcept C192562407 @default.
• W2046282605 hasConcept C201941533 @default.
• W2046282605 hasConcept C2777855556 @default.
• W2046282605 hasConcept C41823505 @default.
• W2046282605 hasConcept C43617362 @default.
• W2046282605 hasConcept C49040817 @default.
• W2046282605 hasConcept C501308230 @default.
• W2046282605 hasConcept C544956773 @default.
• W2046282605 hasConcept C57863236 @default.
• W2046282605 hasConcept C62520636 @default.
• W2046282605 hasConcept C69357855 @default.
• W2046282605 hasConcept C8010536 @default.
• W2046282605 hasConcept C95121573 @default.
• W2046282605 hasConcept C97355855 @default.
• W2046282605 hasConceptScore W2046282605C113196181 @default.
• W2046282605 hasConceptScore W2046282605C121332964 @default.
• W2046282605 hasConceptScore W2046282605C145148216 @default.
• W2046282605 hasConceptScore W2046282605C147789679 @default.
• W2046282605 hasConceptScore W2046282605C159467904 @default.
• W2046282605 hasConceptScore W2046282605C164675345 @default.
• W2046282605 hasConceptScore W2046282605C178790620 @default.
• W2046282605 hasConceptScore W2046282605C184779094 @default.
• W2046282605 hasConceptScore W2046282605C185592680 @default.
• W2046282605 hasConceptScore W2046282605C191897082 @default.
• W2046282605 hasConceptScore W2046282605C192562407 @default.
• W2046282605 hasConceptScore W2046282605C201941533 @default.
• W2046282605 hasConceptScore W2046282605C2777855556 @default.
• W2046282605 hasConceptScore W2046282605C41823505 @default.
• W2046282605 hasConceptScore W2046282605C43617362 @default.
• W2046282605 hasConceptScore W2046282605C49040817 @default.
• W2046282605 hasConceptScore W2046282605C501308230 @default.
• W2046282605 hasConceptScore W2046282605C544956773 @default.
• W2046282605 hasConceptScore W2046282605C57863236 @default.
• W2046282605 hasConceptScore W2046282605C62520636 @default.
• W2046282605 hasConceptScore W2046282605C69357855 @default.
• W2046282605 hasConceptScore W2046282605C8010536 @default.
• W2046282605 hasConceptScore W2046282605C95121573 @default.
• W2046282605 hasConceptScore W2046282605C97355855 @default.
• W2046282605 hasIssue "1" @default.
• W2046282605 hasLocation W20462826051 @default.
• W2046282605 hasOpenAccess W2046282605 @default.
• W2046282605 hasPrimaryLocation W20462826051 @default.
• W2046282605 hasRelatedWork W1975241318 @default.
• W2046282605 hasRelatedWork W1977974829 @default.
• W2046282605 hasRelatedWork W1978189183 @default.
• W2046282605 hasRelatedWork W1992833291 @default.

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