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- W2046468022 abstract "The insertion of a La2O3 capping layer in high-k gate dielectric stacks is a solution for tuning the threshold voltage in nMOSFETs devices. We have investigated TiN/ LaOx/HfSiON/SiON on Si(001) gate stacks by medium energy ion scattering to determine the La in-depth distribution and highlight the impact of spike-annealing after the complete deposition sequence. A dedicated method of preparation combining both mechanical and chemical thinning of the silicon substrate is applied prior to backside analysis. Results show that lanthanum is the main diffusing element after annealing." @default.
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- W2046468022 date "2013-11-01" @default.
- W2046468022 modified "2023-10-16" @default.
- W2046468022 title "Backside medium energy ion scattering study of the lanthanum diffusion in advanced gate stacks for the 32 nm node" @default.
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- W2046468022 doi "https://doi.org/10.1016/j.mee.2013.05.004" @default.
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