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- W2046562972 abstract "Abstract Deep level transient spectroscopy, DLTS, is applied to the characterization of crystal perfection and to the monitoring of impurities introduced during semiconductor growth. The physical basis of the measurement is presented, and the method of defect analysis is included. DLTS is used to determine the concentration and spatial profile of dislocations in epitaxial silicon. A library of defects in silicon enables the identification of transition metal contamination in silicon at concentrations as low as 10 9 cm -3 . The three steps necessary for a positive identification of a DLTS signature are to compare the electrical signature with the known library entries, to determine a material and processing history, and to conduct auxiliary experiments." @default.
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- W2046562972 title "Characterization of defects in semiconductors by deep level transient spectroscopy" @default.
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- W2046562972 doi "https://doi.org/10.1016/0022-0248(90)90293-t" @default.
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