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- W2046724573 abstract "In the resistive phase transition in VO 2 , temperature excursions taken from points on the major hysteresis loop produce minor loops. For sufficiently small excursions these minor loops degenerate into single-valued, nonhysteretic branches NHBs linear in log versus T and having essentially the same or even higher temperature coefficient of resistance TCR as the semiconducting phase at room temperature. We explain this behavior based on the microscopic picture of percolating phases. Similar short NHBs are found in otherwise hysteretic optical reflectivity. We discuss the opportunities NHBs present for infrared imaging technology based on resistive microbolometers. It is possible to choose a NHB with 10 2 ‐10 3 times smaller resistivity than in a pure semiconducting phase, thus providing a microbolometer operating without hysteresis, with low tunable resistivity, and high TCR. Unique features of the proposed method and projected figures of merit are discussed in the context of uncooled focal plane array IR visualization technology. © 2009 American Institute of Physics. doi:10.1063/1.3243286" @default.
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- W2046724573 date "2009-11-15" @default.
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- W2046724573 title "Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging" @default.
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- W2046724573 doi "https://doi.org/10.1063/1.3243286" @default.
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