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- W2046751940 abstract "We investigated the possibility of applying an ALD method to form a Cu diffusion barrier layer of MnOx in an attempt to develop a deposition process which would not be influenced by absorbed water in a substrate. The MnOx formed by ALD using (EtCp)2Mn and H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O had the following features. (1) Capability of thickness control of the MnOx layer by changing the ALD cycle number. (2) Capability of the ALD-MnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> formation on low-k dielectrics by surface modification. (3) Good adhesion of the Cu/ALD-MnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /SiOCH structure showing a fracture toughness of 0.3 MPa·m <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1/2</sup> . (4) Good diffusion barrier property for the thickness of over 1 nm. (5) Minimizing via resistance increase accompanied by the formation of MnOx on Cu." @default.
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- W2046751940 date "2013-06-01" @default.
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- W2046751940 title "Deposition behavior and substrate dependency of ALD MnO<inf>x</inf> diffusion barrier layer" @default.
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- W2046751940 doi "https://doi.org/10.1109/iitc.2013.6615566" @default.
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