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- W2046911212 abstract "The authors have fabricated 0.10- mu m gate-length CMOS devices that operate with high speed at room temperature. Electron-beam lithography was used to define 0.10- mu m polysilicon gate patterns. Surface-channel type p- and n-channel MOSFETs were fabricated using an LDD structure combined with a self-aligned TiSi/sub 2/ process. Channel doping was optimized so as to suppress punchthrough as well as to realize high transconductance and low drain junction capacitance. The fabricated 0.10- mu m CMOS devices have exhibited high transconductance as well as a well-suppressed band-to-band tunneling current, although the short-channel effect occurred somewhat. The operation of a 0.10- mu m gate-length CMOS ring oscillator has been demonstrated. The operation speed was 27.7 ps/gate for 2.5 V at room temperature, which is the fastest CMOS switching ever reported.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W2046911212 date "1993-02-01" @default.
- W2046911212 modified "2023-09-27" @default.
- W2046911212 title "High-performance 0.10- mu m CMOS devices operating at room temperature" @default.
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- W2046911212 doi "https://doi.org/10.1109/55.215105" @default.
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