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• W2047046273 abstract "The process of low pressure organic vapor phase deposition (LP-OVPD) controls the growth of amorphous organic thin films, where the source gases (Alq3 molecule, etc.) are introduced into a hot wall reactor via an injection barrel using an inert carrier gas (N2 molecule). It is possible to control well the following substrate properties such as dopant concentration, deposition rate, and thickness uniformity of the thin film. In this paper, we present LP-OVPD simulation results using direct simulation Monte Carlo-Neutrals (Particle-PLUS neutral module) which is commercial software adopting direct simulation Monte Carlo method. By estimating properly the evaporation rate with experimental vaporization enthalpies, the calculated deposition rates on the substrate agree well with the experimental results that depend on carrier gas flow rate and source cell temperature." @default.
• W2047046273 created "2016-06-24" @default.
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• W2047046273 date "2013-04-16" @default.
• W2047046273 modified "2023-09-25" @default.
• W2047046273 title "The effect of carrier gas flow rate and source cell temperature on low pressure organic vapor phase deposition simulation by direct simulation Monte Carlo method" @default.
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• W2047046273 doi "https://doi.org/10.1063/1.4799055" @default.
• W2047046273 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/3643986" @default.
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