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• W2047144138 abstract "We have studied the structure of Sb-terminated GaAs(001) surfaces using reflection high energy electron diffraction, X-ray photoelectron spectroscopy, and scanning tunneling microscopy (STM). Clean, As-terminated (2×4) surfaces were prepared by molecular beam epitaxy and then exposed to Sb4 at 490°C, producing a (2×8)-reconstructed surface terminated with ∼1 ML of Sb. Re-heating such a surface to 460°C in vacuum returns the surface to a (2×4) reconstruction with approximately 0.5 ML Sb remaining. STM reveals a complex, but well-ordered structure on the (2×8) surface for which a tentative model is proposed. On the (2×4) surface, our results clearly show that each unit cell is terminated by three dimers, with two-thirds Sb dimers and one-third As dimers. These results contrast with previous proposals that the Sb-induced (2×4) surface is terminated solely by one or two Sb dimers." @default.
• W2047144138 created "2016-06-24" @default.
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• W2047144138 date "1999-08-01" @default.
• W2047144138 modified "2023-10-16" @default.
• W2047144138 title "The structure of Sb-terminated GaAs(001) surfaces" @default.
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• W2047144138 doi "https://doi.org/10.1016/s0039-6028(99)00701-3" @default.
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