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• W2047255655 abstract "Photoluminescence decay curves and nanosecond time-gated spectra were measured from silicon implanted SiO2 layers after thermal annealing. Different ion fluences and annealing times were tested. Three components emitting blue-green light with lifetimes of about 0.4, 2, and 10 ns were detected. The peak position of all components moves to longer wavelengths upon increasing the ion fluence. This short-wavelength emission seems to be related to the presence of extended defects acting as precursors of nanocrystals. A slower (microsecond) component, centered in the near infrared and attributed to nanocrystals, was also identified in the highest fluence implant considered (3×1017 cm−2)." @default.
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• W2047255655 date "1997-01-20" @default.
• W2047255655 modified "2023-09-27" @default.
• W2047255655 title "Nanosecond time-resolved emission spectroscopy from silicon implanted and annealed SiO2 layers" @default.
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• W2047255655 doi "https://doi.org/10.1063/1.118410" @default.
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