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• W2047258082 abstract "Abstract A new low temperature atomic layer deposition (LT‐ALD) Al 2 O 3 process using trimethylaluminum (TMA) and acetic acid (CH 3 COOH) is studied both theoretically and experimentally. The atomistic mechanisms of the two deposition half‐cycles on Al‐CH 3 *, Al‐OH*, and Al(η 2 ‐O 2 CCH 3 )* are investigated using density functional theory (DFT). The experimental demonstrations are performed on Si substrates over the growth temperature range 75–400°C. Consistent with the DFT simulation, lower linear growth rate and shorter required oxidant purge times are observed at 90°C, when compared to LT‐ALD Al 2 O 3 using H 2 O as the oxidant. The chemical characteristics of the Al 2 O 3 films grown with both CH 3 COOH at 90°C and H 2 O at 100°C are determined and compared using X‐ray photoelectron spectroscopy (XPS)." @default.
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• W2047258082 date "2013-05-16" @default.
• W2047258082 modified "2023-09-24" @default.
• W2047258082 title "A Water-free Low Temperature Process for Atomic Layer Deposition of Al₂O₃Films" @default.
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• W2047258082 doi "https://doi.org/10.1002/cvde.201207032" @default.
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