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• W2047286567 abstract "Abstract The electrode structures of Pt/Ru and Ru on polycrystalline silicon (poly-Si) were prepared by metalorganic chemical vapor deposition (MOCVD) for high dielectric constant (Ba, Sr)TiO3(BST) capacitor integration. The electrode structures of Pt/Ru/poly-Si annealed above 700°C for 1h in oxygen atmosphere showed a smooth surface ·microstructure without any second phases on the platinum. The specific contact resistance of Pt/Ru and poly-Si in Pt/Ru/poly-Si structures annealed at 800°C was about 1.5 × 10−5 Ω-cm2. The step coverage of Ru film deposited at 150°C was 76% and those of Pt film deposited at 300°C on Ru (deposited at 150°C) was about 61.3%." @default.
• W2047286567 created "2016-06-24" @default.
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• W2047286567 date "2000-11-01" @default.
• W2047286567 modified "2023-10-18" @default.
• W2047286567 title "Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor" @default.
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• W2047286567 doi "https://doi.org/10.1080/10584580008215662" @default.
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