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- W2047459053 abstract "Abstract Several alternative oxidation techniques are developed and tested with the aim to reduce the high density of interface traps D it in n‐type 4H‐SiC MOS capacitors. A lamp furnace in combination with a microwave plasma is employed to grow thin oxide layers, which are used for an insulating stack (SiO 2 and Al 2 O 3 ). The treatment of the oxide with nitrogen is another way to lower D it . We introduce N atoms prior to the oxidation by ion implantation. During the oxidation process, the implanted N‐profile is redistributed; a considerable amount of the implanted N is accumulated at the SiC/SiO 2 ‐interface, which leads to a strong reduction of D it and a large negative flatband voltage. The negative flatband voltage can largely be compensated by coimplantation of aluminum. A model is proposed, which explains the passivation of interface traps in n‐type 4H‐SiC MOS capacitors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2047459053 date "2008-06-24" @default.
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- W2047459053 title "Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors" @default.
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- W2047459053 doi "https://doi.org/10.1002/pssb.200844011" @default.
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