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• W2047553364 abstract "A short review of the structural perfection of high-pressure grown bulk crystals is given. As-grown undoped and Mg-doped crystals are described. The dependence of defect arrangement and quality of the surface on growth polarity is described. A high perfection of homoepitaxial layers grown on these substrates is shown. However, growth of thick layers by HVPE may lead to the formation of differently arranged dislocations and the formation of low angle grain boundaries associated with cracks. It is shown that the introduction of dopant or growth of mismatched layers on undoped high-pressure substrates may lead to the formation of additional defects." @default.
• W2047553364 created "2016-06-24" @default.
• W2047553364 creator A5028794636 @default.
• W2047553364 date "2010-09-01" @default.
• W2047553364 modified "2023-09-27" @default.
• W2047553364 title "Extended defects in bulk GaN and III-nitrides grown on this substrate" @default.
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• W2047553364 doi "https://doi.org/10.1016/j.jcrysgro.2010.04.019" @default.
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