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- W2047581204 abstract "Electrical optical switching and structural transformation of , and N2.0 sccm doped were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of , and N2.0 sccm doped for crystallization was 120, 50 and 90 ns at 12 mW, respectively. was crystallized at . In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than ." @default.
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- W2047581204 date "2008-02-01" @default.
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- W2047581204 title "A study on phase change characteristics of Sb based phase change materials" @default.
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- W2047581204 doi "https://doi.org/10.3740/mrsk.2008.18.2.061" @default.
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