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• W2047714114 startingPage "332" @default.
• W2047714114 abstract "We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important." @default.
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• W2047714114 date "2011-12-31" @default.
• W2047714114 modified "2023-09-25" @default.
• W2047714114 title "Effect on N Defect in Cu-doped III-nitride Semiconductors" @default.
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• W2047714114 doi "https://doi.org/10.4283/jmag.2011.16.4.332" @default.
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