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• W2047804583 abstract "Hexagonal polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition (PACVD). A dielectric constant as low as 1.9 has been achieved for the BCN film by annealing process at 400 °C for 15 min. Capacitance vs. voltage (C–V) characteristics are measured for the Ni/BCN/n-Si metal/insulator/semiconductor structure samples which are fabricated using BCN films with various C composition ratios. It is found that S-doping is effective in improving the C–V characteristics. The S-doped BCN film is deposited on n-GaAs substrate and the interface state density as low as 2.8×1011 eV−1cm−2 is achieved." @default.
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• W2047804583 date "2004-04-01" @default.
• W2047804583 modified "2023-10-14" @default.
• W2047804583 title "Boron carbon nitride film with low dielectric constant as passivation film for high speed electronic devices" @default.
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• W2047804583 doi "https://doi.org/10.1016/j.diamond.2003.12.013" @default.
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