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• W2047852870 abstract "We demonstrate a new type of velocity modulation transistor (VMT) with an InGaAs dual channel structure fabricated on an InP (001) substrate. The dual channel structure consists of a high mobility 10 nm In0.53Ga0.47As quantum well, a 2 nm In0.52Al0.48As barrier layer, and a low mobility 1 nm In0.26Ga0.74As quantum well. The VMTs have a negative differential resistance (NDR) effect with a low source-drain voltage of 0.38 V. The NDR characteristics can be clearly seen in the temperature range of 50 to 220 K with a gate voltage of 5 V. The NDR mechanism is thought to be the carrier transfer from the high mobility to the low mobility channels. Three-terminal VMTs are favorable for applications to highfrequency, high-speed, and low-power consumption devices." @default.
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• W2047852870 date "2006-05-10" @default.
• W2047852870 modified "2023-09-27" @default.
• W2047852870 title "Negative differential resistance of InGaAs dual channel transistors" @default.
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• W2047852870 doi "https://doi.org/10.1088/1742-6596/38/1/027" @default.
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