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- W2048067555 abstract "Ge films were prepared by pulsed laser ablation (PLA) using molten droplets on (100) Si substrates. The second harmonic of YAG laser (532 nm) was employed for producing the Ge droplets. The Ge film prepared at room temperature was found to have a large number of solidified droplets on the substrate indicating that the present PLA process is mainly governed by droplet ejection from the target. The X-ray pole-figure measurement for Ge film prepared at an elevated substrate temperature revealed that the film has Ge crystals aligned in plane as well as out of plane in a cube-on-cube manner. These results indicate an epitaxial growth of Ge film on Si by PLA using a large number of molten droplets." @default.
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- W2048067555 date "2000-04-01" @default.
- W2048067555 modified "2023-09-25" @default.
- W2048067555 title "Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets" @default.
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- W2048067555 doi "https://doi.org/10.1143/jjap.39.l278" @default.
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