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- W2048085479 abstract "Abstract Se-doped GaSb epilayers grown by low-pressure MOCVD were studied. Triethylgallium and trimethylantimony were used as Ga and Sb sources, respectively. Layers of high quality can be obtained. The carrier concentrations of epilayers were greatly influenced by the flow rates of H2Se and V/III mole fraction. The carrier concentration versus these parameters can be well explained. The carrier concentration and the H2Se mole fraction can be expressed as n ∝[H2Se]1.3. Varying the V/III ratio affects the electrical properties of Pd/n-GaSb Schottky diodes. The Se effects can be explained with a simple model." @default.
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- W2048085479 date "1993-12-01" @default.
- W2048085479 modified "2023-10-17" @default.
- W2048085479 title "Investigation of Se-doped GaSb epilayers grown by low pressure metal-organic chemical vapor deposition" @default.
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- W2048085479 doi "https://doi.org/10.1016/0038-1101(93)90225-f" @default.
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