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• W2048113317 abstract "We investigate the role of substrate temperature and gallium flux on the DC and microwave properties of AlGaN/GaN high electron mobility transistors grown by molecular-beam epitaxy on free standing, hydride vapor phase epitaxy grown GaN substrates. The free-standing substrates have threading dislocation densities below 107 cm−2. We find that AlGaN/GaN heterostructures with excellent properties may be grown within a wide range of substrate temperatures and fluxes. Electron Hall mobilities above 1700 cm2/V s and sheet resistances below 370 Ω/□ are typical. We are able to obtain high saturated drain currents with low gate leakage. Off-state breakdown voltages as high as 200 V with low drain and gate leakage currents have been measured. Further, we have measured microwave output power densities above 5 W/mm at 4 GHz with a power-added efficiency of 46% and an associated gain of 13.4 dB. We attribute improved electrical properties in these devices to the reduced threading dislocation density compared to those grown on non-native substrates." @default.
• W2048113317 created "2016-06-24" @default.
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• W2048113317 date "2007-04-01" @default.
• W2048113317 modified "2023-09-25" @default.
• W2048113317 title "AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization" @default.
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• W2048113317 doi "https://doi.org/10.1016/j.jcrysgro.2006.11.085" @default.
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