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• W2048146264 abstract "Optical properties of multi-layer InxGa1 − xAs/GaAs dot-chain heterostructures are studied by means of lateral photoconductivity (PC). Effects of carrier generation and recombination on the photoresponsivity of deep defects and quantum dot arrays are considered. It is shown that the radiative recombination significantly affects the lateral PC spectra thus leading to a nonlinear dependence of photocurrent on excitation intensity. For ground state excitation of the quantum dots the photocurrent nonlinearities are determined by a competition of both generation and recombination processes which include thermal activation." @default.
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• W2048146264 date "2014-07-01" @default.
• W2048146264 modified "2023-09-25" @default.
• W2048146264 title "Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures" @default.
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• W2048146264 doi "https://doi.org/10.1016/j.physleta.2014.07.010" @default.
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