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• W2048199810 abstract "We present a theoretical study of the structural and electronic properties of the M-doped MgIn2S4 ternary spinel semiconductor with M = V, Cr, and Mn. All substitutions, in the normal and in the inverse structure, are analyzed. Some of these possible substitutions present intermediate-band states in the band gap with a different occupation for a spin component. It increases the possibilities of inter-band transitions and could be interesting for applications in optoelectronic devices. The contribution to, and the electronic configuration of, these intermediate bands for the octahedral and tetrahedral sites is analyzed and discussed. The study of the substitutional energies indicates that these substitutions are favorable. Comparison between the pure and doped host's absorption coefficients shows that this deeper band opens up more photon absorption channels and could therefore increase the solar-light absorption with respect to the host." @default.
• W2048199810 created "2016-06-24" @default.
• W2048199810 creator A5035324713 @default.
• W2048199810 date "2013-07-19" @default.
• W2048199810 modified "2023-10-02" @default.
• W2048199810 title "Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure" @default.
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• W2048199810 doi "https://doi.org/10.1063/1.4816102" @default.
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