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• W2048283457 abstract "Abstract Despite the high solar cell efficiencies achieved with Cu(In,Ga)Se2 (CIGS) absorbers, key parameters such as the carrier diffusion length and recombination lifetime are still under investigation. Here, we extract lifetime and diffusion length from temperature-dependent internal quantum efficiency (IQET) spectra of state of the art high efficiency CIGS solar cells. Two-parameter fits to the measured IQE curves using a model for double-graded gap solar cells show very good agreement in the studied temperature range T=146–293 K, allowing the extraction of the electron recombination lifetime in the absorber and the collection probability in the front region of the cell. The obtained results agree with current literature values obtained by other characterization techniques. Furthermore, the temperature dependence of the recombination lifetime is explained by Shockley–Read–Hall recombination through a single bulk defect level with an activation energy of 200 meV." @default.
• W2048283457 created "2016-06-24" @default.
• W2048283457 creator A5023453973 @default.
• W2048283457 creator A5034698495 @default.
• W2048283457 date "2011-07-01" @default.
• W2048283457 modified "2023-09-26" @default.
• W2048283457 title "Temperature-dependent quantum efficiency analysis of graded-gap Cu(In,Ga)Se2 solar cells" @default.
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• W2048283457 doi "https://doi.org/10.1016/j.solmat.2011.06.038" @default.
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