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- W2048362181 abstract "Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)Si by TEM, molten KOH etching and precise XRD measurement." @default.
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- W2048362181 date "2008-09-01" @default.
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- W2048362181 title "Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N<sub>2</sub>-He Atmosphere" @default.
- W2048362181 doi "https://doi.org/10.4028/www.scientific.net/msf.600-603.187" @default.
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