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- W2048367036 abstract "The present paper reports on the properties of liquid-phase epitaxy (LPE) silicon layers grown on monocrystalline highly resistive (1 0 0)-oriented float zone (FZ) silicon substrates. All layers were grown in an indium/gallium solution saturated with Si at temperatures near 920°C. For the optimisation of layer properties for solar cell applications, parameters such as growth rate and Ga concentration of the In solution were varied. Hall measurements, X-ray spectroscopy, mechanical surface profiling (Dektak) and a lifetime analyser were used to characterise the 100–200 μm thick LPE layers." @default.
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- W2048367036 date "2000-01-01" @default.
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- W2048367036 title "Structural and electrical properties of silicon epitaxial layers grown by LPE on highly resistive monocrystalline substrates" @default.
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- W2048367036 doi "https://doi.org/10.1016/s0022-0248(99)00517-5" @default.
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