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• W2048401740 abstract "The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflectivity values of 87% around 500 nm after the oxidation process and 90% around 600 nm after the etching process in overall good agreement with simulations. The broad stopband of airgap/GaN mirrors, about 250 nm wide, results from the strong refractive index contrast between air and GaN layers." @default.
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• W2048401740 date "2009-11-09" @default.
• W2048401740 modified "2023-10-01" @default.
• W2048401740 title "High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers" @default.
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• W2048401740 doi "https://doi.org/10.1063/1.3259720" @default.
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