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- W2048441395 abstract "In a previous publication, we described the occurrence of a patchy contrast in cathodoluminescence (CL) images of thin LPE layers of AlGaAs grown on Cr-doped GaAs substrates. The present paper, a continuation of that work, reports on CL observations of LPE AlGaAs layers grown on Si-doped GaAs substrates and on freshly grown Sn-doped LPE layers; in addition, we have examined changes in the CL intensity distribution with layer thickness. It is concluded that the ’’patches’’ are confined to a region near the GaAs-AlGaAs interface, and that their appearance is associated with the initiation of the AlGaAs epilayer growth." @default.
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- W2048441395 date "1979-06-01" @default.
- W2048441395 modified "2023-09-27" @default.
- W2048441395 title "Growth initiation and cathodoluminescence irregularities in LPE AlGaAs layers" @default.
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- W2048441395 doi "https://doi.org/10.1063/1.326492" @default.
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