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- W2048492051 abstract "The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT." @default.
- W2048492051 created "2016-06-24" @default.
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- W2048492051 date "2014-01-01" @default.
- W2048492051 modified "2023-09-25" @default.
- W2048492051 title "Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT" @default.
- W2048492051 doi "https://doi.org/10.1063/1.4872992" @default.
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