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- W2048500462 abstract "The effects of and plasma passivation on the characteristics of poly-Si thin-film transistors (TFTs) with source/drain extensions induced by a bottom sub-gate were studied. Our results show that although significant improvements in device performance can be obtained by either passivation method, the -plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, and in improving mobility compared to plasma passivation. Furthermore, plasma treatment is also found to be more effective in reducing the anomalous subthreshold hump phenomenon observed in nonplasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of traps distributed in both the front and back sides of the channel by plasma treatment. © 2003 The Electrochemical Society. All rights reserved." @default.
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- W2048500462 date "2003-01-01" @default.
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- W2048500462 title "H[sub 2] and NH[sub 3] Plasma Passivation on Poly-Si TFTs with Bottom-Sub-Gate Induced Electrical Junctions" @default.
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- W2048500462 doi "https://doi.org/10.1149/1.1627355" @default.
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