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• W2048546934 abstract "In this study, zinc oxide (ZnO) thin films were cathodically deposited from aqueous zinc chloride solutions in the presence of oxygen on p-Si(100) substrates using an electrochemical reaction. The change in nonradiative recombination and band bending of the Si surface was investigated in situ by pulsed photoluminescence and pulsed photovoltage techniques during the electrochemical deposition. The layers consisted of ZnO, small amounts of (OH)-groups (from Zn(OH)2 and water) and chloride ions. The morphology of the layers depends on the electrolyte composition, current density (i.e. illumination intensity) and applied potential. Low current densities (<0.5 mA/cm2) lead to smooth and polycrystalline ZnO layers on p-Si, where no SiOx interlayer has been observed. The band bending of p-Si(100) was reduced by about 70 mV and nonradiative recombination increases only slightly during the deposition process with respect to the hydrogenated Si(100) surface." @default.
• W2048546934 created "2016-06-24" @default.
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• W2048546934 creator A5084171347 @default.
• W2048546934 date "2005-09-01" @default.
• W2048546934 modified "2023-10-18" @default.
• W2048546934 title "Nonradiative recombination and band bending of p-Si(100) surfaces during electrochemical deposition of polycrystalline ZnO" @default.
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• W2048546934 doi "https://doi.org/10.1016/j.tsf.2005.01.057" @default.
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