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- W2048588814 abstract "Epitaxial growth of ${mathrm{Ge}}_{x}{mathrm{Si}}_{1ensuremath{-}x}$ alloy films on a Si substrate is simulated employing a direct Monte Carlo technique. In addition to various interlayer and intralayer diffusion processes of Si and Ge atoms, we include a model strain-driven mechanism that gives rise to defects (local out-of-registry regions) in the overgrowth. Our simulation indicates that (i) the overgrowth is defect-free for $xensuremath{le}0.2$, (ii) defect formation is inevitable for $xensuremath{ge}0.5$, and (iii) the transition between the two cases occurs smoothly within $0.2<x<0.5$. On the basis of our simulation, we predict that for a very low Ge fraction $x<0.1$, the critical temperature for the onset of good epitaxial growth will be substantially above the 400ifmmode^circelsetextdegreefi{}C found for higher $x$ values." @default.
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- W2048588814 date "1988-01-15" @default.
- W2048588814 modified "2023-09-26" @default.
- W2048588814 title "Epitaxial growth ofGexSi1−xon Si: A direct Monte Carlo simulation" @default.
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- W2048588814 doi "https://doi.org/10.1103/physrevb.37.1039" @default.
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