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• W2048652062 endingPage "2096" @default.
• W2048652062 startingPage "2081" @default.
• W2048652062 abstract "High-field electrical conduction over a temperature range of 303-363 K has been studied in sandwich structures of Al/Ta2O5/Al and Al/Ta2O5/Ta in the thickness range 400-900 nm. The oxide film was produced by reactively sputtering a tantalum target in a mixture of argon and oxygen. No marked rectification was observed in the samples and it was observed that the conduction process bore strong resemblance to either a Poole-Frenkel or a Schottky mechanism, the results showing a definite lowering of the activation energy for the conduction process with field. Detailed analysis of the data suggest an electrode-limited mechanism such as that suggested by Schottky." @default.
• W2048652062 created "2016-06-24" @default.
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• W2048652062 date "1974-10-11" @default.
• W2048652062 modified "2023-10-11" @default.
• W2048652062 title "Electrical conduction in reactively sputtered tantalum oxide thin films" @default.
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• W2048652062 doi "https://doi.org/10.1088/0022-3727/7/15/313" @default.
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